to-92 plastic-encapsulate transistors KTA1270 transistor (pnp) features g eneral p urpose a pplication s witching application maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -35 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current ?continuous -0.5 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c = -100a, i e =0 -35 v collector-emitter breakdown voltage v (br)ceo i c = -1ma , i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -100a, i c =0 -5 v collector cut-off current i cbo v cb = -35 v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -5 v , i c =0 -0.1 a h fe1 v ce =-1 v, i c = -100ma 70 240 dc current gain h fe2 v ce =-6 v, i c = -400ma 25 collector-emitter saturation voltage v ce(sat) i c = -100ma, i b = -10ma -0.25 v base-emitter voltage v be(on) v ce = -1v, i c = -100ma -1 v transition frequency f t v ce =-6 v, i c = -20ma f =100mhz 200 mhz collector output capacitance c ob v cb =-6v,i e =0,f=1mhz 13 pf classification of h fe rank o y h fe(1) 70-140 120-240 range h fe(2) 25(min) 40(min) to-92 1.emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,june,2011
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